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hexfet power mosfet notes through are on page 2 so-8 absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.5 0.02 1.6 max. -20 -16 -160 20 -30 v a w c 27 18 3 4 6 5 g s s s d d d d

!" form quantity tube/bulk 95 IRF9310PBF-1 tape and reel 4000 irf9310trpbf-1 package type standard pack orderable part number IRF9310PBF-1 so-8 base part number features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds -30 v r ds(on) max (@v gs = -10v) 4.6 r ds(on) max (@v gs = -4.5v) 6.8 q g (typical) 58 nc i d (@t a = 25c) -20 a m

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s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 4.9mh, r g = 25 , i as = -16a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. for design aid only, not subject to production testing. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.020 ??? v/c r ds(on) ??? 3.9 4.6 ??? 5.8 6.8 v gs(th) gate threshold voltage -1.3 -1.8 -2.4 v v gs(th) gate threshold voltage coefficient ??? -5.8 ??? mv/c i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 gfs forward transconductance 39 ??? ??? s q g total gate charge ??? 58 ??? nc v ds = -15v, v gs = -4.5v, i d = - 16a q g total gate charge ??? 110 165 q gs gate-to-source charge ??? 17 ??? q gd gate-to-drain charge ??? 28 ??? r g gate resistance ??? 2.8 ??? t d(on) turn-on delay time ??? 25 ??? t r rise time ??? 47 ??? t d(off) turn-off delay time ??? 65 ??? t f fall time ??? 70 ??? c iss input capacitance ??? 5250 ??? c oss output capacitance ??? 1300 ??? c rss reverse transfer capacitance ??? 880 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 71 107 ns q rr reverse recovery charge ??? 12 18 nc thermal resistance parameter units r r typ. ??? ??? c/w max. 20 50 static drain-to-source on-resistance a ??? ??? ??? ??? -2.5 -160 na nc ns pf ??? typ. ??? r g = 1.8 v ds = -10v, i d = -16a v ds = -24v, v gs = 0v, t j = 125c v dd = -15v, v gs = -4.5v i d = -1.0a v ds = -15v v gs = -20v v gs = 20v v gs = -10v m a t j = 25c, i f = -2.5a, v dd = -24v di/dt = 100a/ s t j = 25c, i s = -2.5a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol i d = -16a v ds = -24v, v gs = 0v conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -20a v ds = v gs , i d = -100 a v gs = -4.5v, i d = -16a conditions see figs. 20a &20b max. 630 -16 ? = 1.0mhz v gs = 0v v ds = -15v
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -4.5v -3.5v -3.1v -2.9v -2.7v -2.5v bottom -2.3v 60 s pulse width tj = 25c -2.3v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.3v 60 s pulse width tj = 150c vgs top -10v -4.5v -3.5v -3.1v -2.9v -2.7v -2.5v bottom -2.3v 1 2 3 4 5 -v gs , gate-to-source voltage (v) 1.0 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -10v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -20a v gs = -10v 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 150 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v i d = -16a

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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 8. maximum safe operating area fig 9. maximum drain current vs. ambient temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -100 a 25 50 75 100 125 150 t a , ambient temperature (c) 0 5 10 15 20 - i d , d r a i n c u r r e n t ( a ) 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100 sec 1msec 10msec
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fig 14. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 16 typical power vs. time

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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fig 17.

for p-channel hexfet power mosfets 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 125c t j = 25c i d = -20a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 300 600 900 1200 1500 1800 2100 2400 2700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -1.8a -2.7a bottom -16a 0 20 40 60 80 100 120 140 160 -i d , drain current (a) 2 4 6 8 10 12 14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) v gs = -10v v gs = -4.5v 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 200 400 600 800 1000 s i n g l e p u l s e p o w e r ( w )
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fig 18a. gate charge test circuit fig 18b. gate charge waveform fig 19b. unclamped inductive waveforms fig 19a. unclamped inductive test circuit fig 20b. switching time waveforms fig 20a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v ' ( 1 ) $
0.1 % + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f
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so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4. outline conforms to jedec outline ms-012aa. not es : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a subst rate. mold prot rus ions not t o exceed 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: t his is an irf7101 (mosfet) f 7101 xxxx int ernational logo rectifier part number lot code product (optional) dat e code (yww) y = l as t digit of t he ye ar ww = we e k a = assembly site code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inches)) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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